Fairchild Semiconductor recently introduced the SuperFET III family of 650-V N-channel MOSFETs, which are well suited for telecom equipment, electric vehicle (EV) chargers, solar products, and more. The SuperFET III MOSFET family combines reliability, low EMI, high efficiency, and superior thermal performance. Furthermore, its various package options give you greater flexibility when dealing with space-constrained designs.
The SuperFET III has the lowest Rdson in any easy drive version of a Super Junction MOSFET. It is has 3× better single pulse Avalanche Energy (EAS) performance than its closest competitor. Such advantages make it useful for industrial applications such as solar inverters and EV chargers.
The SuperFET III MOSFET family is now available in multiple package and parametric options.
Source: Fairchild Semiconductor
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