Microchip Technology subsidiary Silicon Storage Technology (SST) and United Microelectronics Corporation (UMC) have announced the full qualification and availability of SST’s embedded SuperFlash non-volatile memory on UMC’s 40 nm CMOS platform. The 40-nm process features a more than 20 percent reduction in embedded Flash cell size and a 20- to 30-percent reduction in macro area over their 55-nm process.
SST’s SuperFlash technology complements UMC’s embedded memory portfolio with high density and low-power IP. Combined with SST’s inherent technology reliability, UMC’s flexible capacity and high-yield maturity for its 55 nm and 40 nm platform provides foundry customers the manufacturing support needed to build a range of product applications.
To date, more than 80 billion units have shipped with SST’s embedded SuperFlash technology. SuperFlash technology is based on a proprietary split-gate Flash memory cell with the following capabilities:
- Low-power program, erase and read operations
- High performance with fast read access
- Good scalability from 1 µm technology node to 28 nm technology node
- High endurance cycling up to 500,000 cycles
- Excellent data retention of over 20 years
- Good performance at high temperature for automotive-grade applications
- Immunity to Stress-Induced Leakage Current (SILC)
Microchip Technology | www.microchip.com
Silicon Storage Technology | www.sst.com
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