Microchip Technology, via its Microsemi subsidiary, has announced the production release of a family of Silicon Carbide (SiC) power devices that leverage the ruggedness and the performance benefits of wide-bandgap technology. Complemented by Microchip’s broad range of MCUs and analog solutions, the SiC devices join the company’s family of SiC products designed to meet the needs of Electric Vehicles (EVs) and other high-power applications in fast-growing markets.
Microchip’s 700 V SiC MOSFETs and 700 V and 1200 V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC power modules. The more than 35 discrete products that Microchip has added to its portfolio are available in volume, supported by development services, tools and reference designs.. The company’s family of SiC die, discretes and power modules span a wide range of voltage, current ratings and package types.
The SiC MOSFETs and SBDs offer more efficient switching at higher frequencies and pass ruggedness tests at levels considered critical for guaranteeing long-term reliability, says Microchip. The company’s SiC SBDs perform approximately 20 percent better than other SiC diodes in these Unclamped Inductive Switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage. Microchip’s SiC MOSFETs also outperform alternatives in these ruggedness tests, demonstrating excellent gate oxide shielding and channel integrity with little lifetime degradation in parameters even after 100,000 cycles of Repetitive UIS (RUIS) testing.
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