Renesas Electronics recently introduced two new Advanced Low Power SRAMs with more than 500 times the resistance to soft errors compared to full CMOS memory cells. Fabricated using the 110-nm process, the new RMLV1616A Series of 16-Mb devices and the RMWV3216A Series of 32-Mb devices feature an innovative memory cell technology that improves reliability and leads to longer battery life.
The Advanced LP SRAM devices feature their memory cell technology that delivers soft error resistance over 500 times that of conventional full CMOS memory cells. Thus, it’s an intelligent solution for use in measurement devices, smart grid-related devices, and industrial equipment.
Features and specs:
- Advanced LP SRAM technology for improved soft error resistance and enhanced reliability
- Reduction of standby current tfor longer backup battery service life. Low current consumption levels are less than half the levels of comparable earlier Renesas SRAM products
- The 16-Mb RMLV1616A Series is available in three packages: 48-ball FBGA, 48-pin TSOP, and 52-pin µTSOP
- The 32-Mb RMWV3216A Series is available in a 48-ball FBGA package.
Samples of the RMLV1616A Series and RMWV3216A Series will be available in September. The 16-Mb RMLV1616A Series costs $16.50 per unit. The 32-Mb RMWV3216A Series is priced at $31 per unit. Mass production is scheduled to begin in October 2015.
Source: Renesas Electronics Corp.
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