Infineon Technologies has launched new devices in its 1,200 V Silicon Carbide (SiC) CoolSiC MOSFET family. The CoolSiC Easy 2B power modules enable engineers to reduce system costs by increasing power density. In addition, they can also lower operational costs significantly. Owing to about 80 % lower switching losses compared to silicon IGBTs, inverter efficiency levels exceeding 99 % can be reached. Because of the specific SiC properties, the same or even higher switching-frequency operation can be realized. This is particularly attractive for fast switching applications such as UPS and energy storage.
Additionally, the integrated body diode of the CoolSiC MOSFET chip ensures a low-loss freewheeling function without the need for another diode chip. While the NTC temperature sensor facilitates the monitoring of the device, the PressFIT technology reduces assembly time for mounting the device.
The CoolSiC MOSFET Easy 2B modules are available now. Just recently, Infineon launched the first CoolSiC MOSFET six-pack module in the well-established Easy 1B package with an RDS(ON) of 45 mΩ.
Infineon Technologies | www.infineon.com
Sponsor this ArticleCircuit Cellar's editorial team comprises professional engineers, technical editors, and digital media specialists. You can reach the Editorial Department at [email protected], @circuitcellar, and facebook.com/circuitcellar