Dialog Semiconductor recently announced the upcoming availability of the DA8801, which is its first gallium nitride (GaN) power IC device, using Taiwan Semiconductor Manufacturing Corporation’s (TSMC) 650-V GaN-on-Silicon process technology. The DA8801 should initially find traction in the the fast-charging smartphone and computing adapter segment.
Along with Dialog’s digital Rapid Charge power conversion controllers, the DA8801 will enable more efficient, smaller, and higher power density adapters compared to FET-based options. The DA8801’s half-bridge integrates building blocks (e.g., gate drives and level shifting circuits) with 650-V power switches. Allows an up to 50% size reduction in power electronics
The DA8801 will be available in sample quantities in Q4 2016.
Source: Dialog Semiconductor
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