The 950 V CoolMOS P7 enables up to a 1% efficiency increase and from 2˚C to 10˚C lower MOSFET temperature for more efficient designs. This component offers also up to 58% lower switching losses compared to previous generations of the CoolMOS family. Compared to competing technologies in the market the improvement is more than 50%, according to the company.
The 950 V CoolMOS P7 comes in TO-220 FullPAK (shown), TO-251 IPAK LL, TO-252 DPAK, and SOT-223 packaging. This makes it possible to change from THD to SMD device.
Infineon Technologies | www.infineon.com
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