Infineon Technologies has added a new member to its CoolMOS P7 family, the 950 V CoolMOS P7 Superjunction MOSFET. It is designed to meet the needs of applications such as lighting, smart meters, mobile chargers, notebook adapters, AUX power supplies and industrial SMPS applications. This semiconductor solution combines excellent thermal and efficiency performance with lower bill of materials and overall production costs.
The 950 V CoolMOS P7 attributes include outstanding DPAK RDS(on) enabling higher density designs. In addition, the excellent VGS(th) and lowest VGS(th) tolerance make the MOSFET easy to drive and design in. Similar to the other members of the P7 family from Infineon, this component comes with integrated Zener diode ESD protection. This results in better assembly yields and therefore less cost, and fewer ESD-related production issues.
The 950 V CoolMOS P7 enables up to a 1% efficiency increase and from 2˚C to 10˚C lower MOSFET temperature for more efficient designs. This component offers also up to 58% lower switching losses compared to previous generations of the CoolMOS family. Compared to competing technologies in the market the improvement is more than 50%, according to the company.
The 950 V CoolMOS P7 comes in TO-220 FullPAK (shown), TO-251 IPAK LL, TO-252 DPAK, and SOT-223 packaging. This makes it possible to change from THD to SMD device.
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