OptiMOS Product Family Exceeds 95% Efficiency

Infineon Technologies recently launched the OptiMOS 5 25- and 30-V product family, the next generation of Power MOSFETs in standard discrete packages, a new class of power stages named Power Block, and in an integrated power stage, DrMOS 5×5. Together with Infineon’s driver and digital controller products the company delivers full system solutions for applications such as server, client, datacom or telecom.Infineon-OptiMOS

The newly introduced OptiMOS family offers benchmark solutions with efficiency improvements of around 1% across the whole load range compared to its previous generation, exceeding 95% peak efficiency in a typical server voltage regulator design. This improved performance is based for example on the reduction of switching losses (Q switch) by 50% compared to the previous OptiMOS technology. Thus, implementing the new OptiMOS 25 V would lead to energy savings of 26.3 kWh per year for a single 130-W server CPU working 365 days.

The launch of the OptiMOS product family is accompanied by the introduction of a new packaging technology offering a further reduction in PCB area consumption. It is used in the Power Block product family and in the integrated powerstage DrMOS 5×5 and offers a source down low-side MOSFET for improved thermal performance, with a reduction by 50% of the thermal resistance in comparison to standard package solution, such as SuperSO8.

Infineon`s Power Block is a leadless SMD package comprising the low-side and high-side MOSFET of a synchronous DC/DC converter into a 5.0 × 6.0 mm 2 package outline. With Power Block, customers can shrink their designs up to 85 percent by replacing two separate discrete packages, such as SuperSO8 or SO-8. Both, the small package outline and the interconnection of the two MOSFETs within the package minimize the loop inductance for best system performance.

OptiMOS 5 25V is also used in an integrated power stage, combining DrMOS 5×5, driver and two MOSFETs, for a total area consumption on the PCB equal to 25mm². The integrated driver plus MOSFETs solution results in a shorter design time and is easy to design-in. Additionally, the dovetailed power stage includes a high accurate temperature sense of +/-5°C (compared to +/-10°C of an external one) which enables higher system reliability and performance.

Samples of the new OptiMOS 25- and 30-V devices in SuperSO8, S3O8 and Power Block packages, with on-state resistances from 0.9 mΩ to 3.3 mΩ are available. Additional products with monolithic integrated Schottky-like diode and products in 30 V will be available from Q2 2015 onwards. DrMOS 5×5 will be released in Q2 2015. Samples are available.

Source: Infineon