Renesas Electronics has announced what it claims is space industry’s first plastic-packaged, radiation-tolerant PWM controller and Gallium Nitride (GaN) FET driver for DC/DC power supplies in small satellites (smallsats) and launch vehicles. The ISL71043M single-ended current mode PWM controller and ISL71040M low-side GaN FET driver are ideal for isolated flyback and half-bridge power stages, and motor control driver circuits in satellite buses and payloads.
Private ‘new space’ companies have begun launching smallsats to form large constellations operating in multiple low Earth orbit (LEO) planes. Smallsat mega-constellations provide global broadband Internet links, as well as high-resolution Earth observation imaging for sea, air, and land asset tracking. The ISL71043M PWM controller provides fast signal propagation and output switching in a small 4 mm x 5 mm SOIC plastic package, reducing PCB area up to 3x compared to competitive ceramic packages. In addition, the ISL71043’s 5.5 mA max supply current reduces power loss more than 3x, and its adjustable operating frequency — up to 1 MHz — enables higher efficiency and the use of smaller passive filter components. The ISL71043M and ISL71040M are characterization tested at a total ionizing doze (TID) of up to 30 krads(Si), and for single event effects (SEE) at a linear energy transfer (LET) of 43MeV•cm2/mg. Both devices operate over an extended temperature range of -55°C to +125°C.
The ISL71040M low-side GaN FET driver safely drives Renesas’ rad-hard GaN FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage between 4.5V and 13.2V, a gate drive voltage (VDRV) of 4.5V, and it includes both inverting and non-inverting inputs. The device’s split outputs adjust the turn-on and turn-off speeds, and its high current source and sink capability enables high frequency operation. The ISL71040M ensures reliable operation when driving GaN FETs by precisely controlling the gate driver voltage to +3/-5% over temperature and radiation. It also includes floating protection circuitry to eliminate unintentional switching.
Key Features of ISL71043M PWM Controller:
Operating supply range of 9 V to 13.2 V
5 mA (max) operating supply current
±3% current limit threshold
Integrated 1 A MOSFET gate driver
35 ns rise and fall times with 1 nF output load
5 MHz bandwidth error amplifier
Key Features of ISL71040M Low Side GaN FET Driver:
Operating supply range of 4.5 V to 13.2V
Internal 4.5 V regulated gate drive voltage
Independent outputs to adjust rise and fall time
High 3A/2.8A sink/source capability
3 ns rise/3.7 ns fall times with 1nF output load
Internal undervoltage lockout (UVLO) on the gate driver
The ISL71043M PWM controller and ISL71040M GaN FET driver can be combined with the ISL73024SEH 200V GaN FET or ISL73023SEH 100V GaN FET, and ISL71610M passive-input digital isolator to create a variety of power stage configurations. The ISL71043M radiation-tolerant PWM controller is available now in an 8-lead 4 mm x 5 mm SOIC package, and the ISL71040M radiation-tolerant low-side GaN FET driver is available in an 8-lead 4mm x 4 mm TDFN package.
Texas Instruments (TI) has announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications. TI’s family of GaN FET devices provides a alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies.
Dubbed the LMG3410R050, LMG3410R070 and LMG3411R070 TI’s integrated GaN power stage doubles power density and reduces losses by 80 percent compared to silicon metal-oxide semiconductor field-effect transistors (MOSFETs). Each device is capable of fast, 1-MHz switching frequencies and slew rates of up to 100 V/ns. The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing. Additionally, each device provides integrated thermal and high-speed, 100-ns overcurrent protection against shoot-through and short-circuit conditions.
Devices for every power level: Each device in the portfolio offers a GaN FET, driver and protection features at 50 mΩ or 70 mΩ to provide a single-chip solution for applications ranging from sub-100 W to 10 kW.
These devices are available now in the TI store in 8-mm-by-8-mm split-pad, quad flat no-lead (QFN) packaging. The LMG3410R050, LMG3410R070 and LMG3411R070 are priced at US$18.69, $16.45 and $16.45, respectively, in 1,000-unit quantities.
Dialog Semiconductor recently announced the upcoming availability of the DA8801, which is its first gallium nitride (GaN) power IC device, using Taiwan Semiconductor Manufacturing Corporation’s (TSMC) 650-V GaN-on-Silicon process technology. The DA8801 should initially find traction in the the fast-charging smartphone and computing adapter segment.
Along with Dialog’s digital Rapid Charge power conversion controllers, the DA8801 will enable more efficient, smaller, and higher power density adapters compared to FET-based options. The DA8801’s half-bridge integrates building blocks (e.g., gate drives and level shifting circuits) with 650-V power switches. Allows an up to 50% size reduction in power electronics
The DA8801 will be available in sample quantities in Q4 2016.
Texas Instruments recently announced the availability of 600-V gallium nitride (GaN) 70-mΩ field-effect transistor (FET) power-stage engineering samples. The 12-A LMG3410 power stage coupled with TI’s analog and digital power-conversion controllers enables you to create smaller, higher-performing designs compared to silicon FET-based solutions. These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing, and renewable energy applications.
The LMG3410’s features and specifications:
Integrated driver and zero reverse-recovery current
Integrates built-in intelligence for temperature, current, and undervoltage lockout (UVLO) fault protection
Includes GaN FETs
Double the power density
Reduced packaging parasitic inductance
Enables new topologies
To support designers who are taking advantage of GaN technology in their power designs, TI also launched new products to expand its GaN ecosystem. The LMG5200POLEVM-10, a 48-V to 1-V point-of-load (POL) evaluation module, will include the new TPS53632G GaN FET controller, paired with the 80-V LMG5200 GaN FET power stage. The solution allows for efficiency as high as 92% in industrial, telecom, and datacom applications.
TI will offer a development kit that includes a half-bridge daughtercard and four LMG3410 IC samples. A second kit will include a system-level evaluation motherboard. When used together, the two kits enable immediate bench testing and design. The two development kits are available for $299 and $199, respectively.
Infineon Technologies recently introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors. The devices enable mobile base station manufacturers to build smaller, more powerful and more flexible transmitters. With higher efficiency, improved power density, and more bandwidth than currently used RF power transistors, the new devices improve the economics of building infrastructure to support today’s cellular networks. Additionally, they will enable the transition to 5G technology with higher data volumes and enhanced user-experience.
The new RF power transistors leverage the performance of GaN technology to achieve ten percent higher efficiency and five times the power density of the LDMOS transistors commonly used today. This translates to smaller footprints and power requirements for the power amplifiers (PA) of base station transmitters in use today, which operate in either the 1.8-2.2 GHz or 2.3-2.7 GHz frequency range. Future GaN on SiC devices will also support 5G cellular bandsup to the 6 GHz frequency range. This roadmap allows Infineon to build on its long-standing expertise and state-of-the-art production technologies for RF transistor technology.
Design flexibility and support for the next-generation of 4G technology are additional benefits of GaN devices for RF power applications. The new devices have twice the RF bandwidth of LDMOS, so that one PA can support multiple operating frequencies. They also have increased instantaneous bandwidth available for transmitters, which lets a carrier offer higher dates using the data aggregation technique specified for 4.5G cellular networks.
The TPH3002LD and the TPH3002LS are 600-V Gallium nitride (GaN)-based, low-profile power quad flat no-lead (PQFN) high electron mobility transistors (HEMTs). The HEMTs utilize Transphorm’s patented, high-performance EZ-GaNTM technology, which combines low switching and conduction losses, reducing the overall system energy dissipation up to 50%.
The TPH3002PD and TPH3002PS HEMTs are designed for use in smaller, lower-power applications (e.g., adapters and all-in-one computer power supplies). The HEMTs feature a Kelvin connection to isolate the gate circuit from the high-current output circuit to further reduce electromagnetic interference (EMI) and high-frequency switching capabilities.
Evaluation boards are available with the devices.