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New 16- and 32-Mb Advanced Low-Power SRAMs

Renesas Electronics recently introduced two new Advanced Low Power SRAMs with more than 500 times the resistance to soft errors compared to full CMOS memory cells. Fabricated using the 110-nm process, the new RMLV1616A Series of 16-Mb devices and the RMWV3216A Series of 32-Mb devices feature an innovative memory cell technology that improves reliability and leads to longer […]

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