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SemiQ Expands 1200 V Gen3 SiC MOSFET Line with Launch of 7.4, 14.5 and 34 mΩ SOT-227 Modules

SemiQ SOT-227
Written by Kirsten Campbell

SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has expanded its family of 1200 V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer RDSon values of 7.4, 14.5, and 34 mΩ. SemiQ’s GCMS modules, which feature Schottky Barrier Diodes (SBDs), have lower switching losses at high temperature, especially compared to non-SBDs GCMX modules.

The devices target medium-voltage, high-power conversion applications, including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems. All parts are screened using wafer-level gate-oxide burn-in tests exceeding 1400 V and are avalanche tested to 800 mJ (330 mJ for 34 mΩ modules).

All modules are highly rugged, easy to mount, and feature an isolated backplate as well as direct mounts for a heat sink. They have been engineered to enhance performance and switching speeds while minimizing losses in such applications. The 7.4 mΩ GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72 mJ Turn on, 0.94 mJ Turn off) and has a body diode reverse recovery charge of 593 nC.

Their junction-to-case thermal resistance ranges from 0.23°C/W for the 7.4 mΩ MOSFET module to 0.70°C/W for the 34 mΩ MOSFET module.

Dr. Timothy Han, President at SemiQ said: “The expansion of our third-generation 1200 V SiC MOSFET family marks another key milestone in SemiQ’s mission to deliver superior silicon carbide solutions for high-performance power applications. By broadening our portfolio with lower resistance options and rugged, easy-to-mount SOT-227 packages, we’re empowering designers to achieve higher efficiency, faster switching, and greater reliability across a wide range of energy and industrial systems.”

Part Numbers Packages Ratings RDSon
GCMX007C120S1-E1 SOT-227 1200 V 192 A 7.4 mΩ
GCMS007C120S1-E1 SOT-227 1200 V 189 A 7.3 mΩ
GCMX014C120S1-E1 SOT-227 1200 V 104 A 14.5 mΩ
GCMS014C120S1-E1 SOT-227 1200 V 103 A 15 mΩ
GCMX034C120S1-E1 SOT-227 1200 V 51 A 34 mΩ
GCMS034C120S1-E1 SOT-227 1200 V 53 A 34 mΩ

SemiQ Inc. | semiq.com

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Kirsten Campbell is a Marketing Tornado and junk robot of information. Analytical and creative, she has been in marketing and communications since 2008 and worked with everyone from small businesses to your favorite household names. 

 

Ask her about the time she made a numismatics blog interesting (yes, really) or wrote an obit for a family she never met.

 

An ardent admirer of corporate snark played out online, Kirsten loves Reese’s peanut butter cups and still isn't over the Mars Rover.

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SemiQ Expands 1200 V Gen3 SiC MOSFET Line with Launch of 7.4, 14.…

by Kirsten Campbell time to read: 1 min