EPC launches a new eGaN technology that doubles the performance of previous solutions. Efficient Power Conversion (EPC) introduces the 80V, 4mOhm EPC2619 GaN FET in a 1.5mm x 2.5mm package. This FET offers higher performance and smaller solution sizes than the traditional MOSFETs found on the market today.
The EPC2619 offers high power density for applications including DC-DC conversion, motor drives, and synchronous rectification for the 12V – 20V ranges.
The footprint of the EPC2619 is based on an RⅮs(on) of only 4mOhms in the tiny 1.5mm x 2.5mm form factor. The footprint area of the EPC2691 is 15mΩ*MM2, which is fives times smaller than any other 80V silicon MOSFETs.
The EPC2619 was designed with a wide variety of motor drive applications in mind. For example solar optimizers and synchronous rectification converting 12V to 20V for chargers, TV power supplies, and adaptors. 28V – 48V for conversions of power tools, eBikes, and eScooters. Also for such solutions as DC-DC converters.
The usual RⅮs(on) x Q(GD) indicative of the power losses in hard-switching applications, is overall ten times better than 80V silicon MOSFETs. This allows for switching frequencies that are increased ten times higher than the silicon MOSFETs. There is no loss of efficiency in this frequency and hard switching resulting in a higher overall power density.
The combinations of hard switching and higher frequencies make the FETs ideal candidates for high-frequency hard switching 24V – 48V applications that include boost converters, boost, and buck-boost scenarios.
In a soft-switching environment, where Typical R(DS(on)) x Q(oss) are indicative of a power loss, the range is 87 mOhms*nC twice as good as an 80V silicon MOSFET. This increase in rates is giving the EPC2619 the capability to work well in soft-switching applications. This could be in the primary rectification full bridge for LLC-based DCX DC-DC converters.
“This is just the first product of a new generation of discrete transistors and integrated circuits for EPC. With the launch of the EPC2619, EPC continues to keep GaN power devices on a path reminiscent of Moore’s Law,” noted Alex Lidow, EPC CEO and co-founder.
The EPC90153 is a development board half bridge featuring the EPC2619 GaN FET. The board is 2″ x 2″ (50.8mm x 50.8mm) and designed for optimal switching performance. It carries all the critical components necessary for an evaluation of the power systems designers are searching for today. The aim is to speed the design process from concept and the time-to-market.
The EPC2619 is priced at $1.90USD for 2.5Ku volumes
The EPC90153 development board is priced at $ 200.00 USD each.
Designers can cross-reference their silicon solutions with a compatible GaN solution using the EPC Cross Reference tool found here.
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