CoolGaN 600 V GIT HEMT portfolio is delivering high performance and quality. Infineon has developed the latest in GaN-integrated power stage (IPS) devices including the GIT-HEMT devices. The IPS devices offer more flexibility to meet specific needs in development.
The discrete CoolGaN GIT-HEMT devices are available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81, and TSON-8 packages. They have multiple on-state resistance ranges from 42 to 340 mΩ. The IPS solutions come in the form of single-channel and half-bridge devices.
Half-bridge solutions integrate two GaN switches and are housed in a TIQFN-28 package with (R-DS(on), max) values of (2X) 190-650 mΩ. Single channel solutions are available in thermally-enhanced TIQFN-21 package with an R-DS(on), max values in the range of 130-340 mΩ.
The GIT technology has a unique combination of a robust gate structure, internal electrostatic discharge (ESD) protection, and high dynamic R-DS(on) performance. The system fully exploits the intrinsic properties of GaN to deliver figures of merit (FoM) compared to Si technologies. An example is that Gan offers a ten times higher breakdown field and two times higher electron mobility.
It also offers a ten times lower output charge, zero reverse recovery charge, and ten times lower gate charge with linear capacitance (C – OSS).
The portfolio of CoolGaN 600 V GIT discrete devices includes both top and bottom-side cooled (TSC/BSC) JEDEC-compliant packages. CoolGaN TSC power packages are unique to the market and enable devices to meet higher power requirements.
To inquire about availability and to research more in-depth go to Infineons CoolGaN page on their website here.
Infineon | infineon.com
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