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NexFET N-Channel Power MOSFETs Achieve Industry’s Lowest Resistance

Texas Instruments recently introduced 11 new N-channel power MOSFETs to its NexFET product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry’s lowest on-resistance (Rdson) in a QFN package. In addition, TI’s new 12-V FemtoFET CSD13383F4 for low-voltage battery-powered applications achieves the lowest resistance at 84% below competitive devices in a tiny 0.6 mm × 1 mm package. TI CSD16570Q5B

The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For instance, the 25-V CSD16570Q5B supports a maximum of 0.59 mΩ of Rdson, while the 30-V CSD17570Q5B achieves a maximum of 0.69 mΩ of Rdson.

TI’s new CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for DC/DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot swap controller such as the TPS24720.

The currently available products range in price from $0.10 for the FemtoFET CSD13383F4 to $1.08 for the CSD17670Q5B and CSD17570Q5B in 1,000-unit quantities.

Source: Texas Instruments


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