Infineon Technologies recently introduced a new class of low saturation voltage V CE(sat) IGBTs specifically optimized for low switching frequencies ranging from 50 Hz to 20 kHz. These can typically be found in applications such as uninterruptible power supply (UPS) as well as in inverters for photovoltaic and welding systems. The new L5 family is based on the TRENCHSTOP 5 thin wafer technology, with the intrinsically low conduction losses having been reduced further with additional optimization of the carrier profile.
With a typical V CE(sat) value at 25°C of 1.05 V, new levels of efficiency can be reached—up to 0.1% efficiency improvement in a NPC 1 topology or up to 0.3% efficiency improvement in a NPC 2 topology when replacing predecessor TRENCHSTOP IGBTs with the L5 family. Coupled with the positive temperature coefficient of V CE(sat), high efficiency is maintained plus paralleling straightforward—an industry benchmark for IGBTs switching below the 20-kHz frequency. The TRENCHSTOP 5 technology base used for the new L5 family not only delivers unmatched low conduction losses, but total switching losses are as low as 1.6 mJ at 25°C. For these reasons the use of the newly introduced low V CE(sat) IGBT leads to higher efficiency, improved reliability and smaller dimensions of the systems in low switching frequency applications.
The new L5 IGBT family is released in a first wave using the industry standard TO-247 three-pin package. Additionally, for applications requiring extended efficiency enhancement, Infineon also offers the L5 in the innovative TO-247 4pin Kelvin-Emitter package. When compared to the standard TO-247 3pin package, the TO-247 4pin package provides a further 20% reduction in switching losses. Thus the L5 in combination with the TO-247 4pin package provides the ultimate lowest conduction and switching losses and maintains Infineon’s leading position in offering the High Power market highly innovative and differentiated products.
The new low V CE(sat) L5 family is available in 30A and 75A current classes as single IGBT and co-packed with Infineon’s ultrafast Rapid 1 and Rapid 2 silicon diodes. The TO-247 4pin Kelvin-Emitter package will be available in 75A current class.
Source: Infineon Technologies