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Integrated High-Voltage GaN FET and Driver Solution

Texas Instruments recently announced the availability of 600-V gallium nitride (GaN) 70-mΩ field-effect transistor (FET) power-stage engineering samples. The 12-A LMG3410 power stage coupled with TI’s analog and digital power-conversion controllers enables you to create smaller, higher-performing designs compared to silicon FET-based solutions. These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing, and renewable energy applications.TI LMG3410

The LMG3410’s features and specifications:

  • Integrated driver and zero reverse-recovery current
  • Integrates built-in intelligence for temperature, current, and undervoltage lockout (UVLO) fault protection
  • Includes GaN FETs
  • Double the power density
  • Reduced packaging parasitic inductance
  • Enables new topologies

To support designers who are taking advantage of GaN technology in their power designs, TI also launched new products to expand its GaN ecosystem. The LMG5200POLEVM-10, a 48-V to 1-V point-of-load (POL) evaluation module, will include the new TPS53632G GaN FET controller, paired with the 80-V LMG5200 GaN FET power stage. The solution allows for efficiency as high as 92% in industrial, telecom, and datacom applications.

 

TI will offer a development kit that includes a half-bridge daughtercard and four LMG3410 IC samples. A second kit will include a system-level evaluation motherboard. When used together, the two kits enable immediate bench testing and design. The two development kits are available for $299 and $199, respectively.

Source: Texas Instruments

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