ams AG recently announced the availability of its High Performance Analog Low Noise CMOS process (“A30”). The new A30 technology features performance optimized, isolated 3.3-V devices (NMOSI and PMOSI), isolated 3.3-V low Vt devices (NMOSIL and PMOSIL), an isolated high-voltage device with thin gate oxide (NMOSI20T), vertical bipolar transistors (VERTN1 and VERTPH), and an isolated 3.3-V super-low-noise transistor (NMOSISLN). It enables flicker noise reduction by at least a factor of 4 to 10 for high drain currents compared to H35 process. Passive devices such as various capacitors (poly, sandwich, and MOS varactor) and resistors (diffusion, well based, poly, high resistive poly and precision) complete the device offering.
The A30 process is well suited for ultra-low noise sensing applications and analog read-out ICs that require noise optimized input stages or high signal-to-noise ratios. It allows the development of innovative solutions for consumer electronics, automotive, medical and IoT devices. The A30 process is fully qualified and manufactured in ams’ state of the art 200-mm fabrication facility ensuring very low defect densities and highest yield. All 0.30-µm elements are drawn and verified as 0.35µm devices. The optical shrink (factor of 0.9) is done in the mask shop on the completed GDSII data and results in smaller die sizes respectively more dies per wafer.
The A30 process is supported by the well-known hitkit, ams’s industry benchmark process design kit. Based on Virtuoso Custom IC technology 6.1.6 from Cadence, the new hitkit helps design teams to significantly reduce time-to-market for products in the analog-intensive, mixed-signal arena. The hitkit provides a comprehensive design environment and a proven route to silicon. The new hitkit v4.15 for A30 process is now available on ams’s foundry support server.