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F-RAM Expands the Density Range of Energy-Efficient Nonvolatile RAMs

Cypress Semiconductor Corp. today introduced a family of 4Mb serial Ferroelectric Random Access Memories (F-RAMs), which are the industry’s highest density serial F-RAMs. The 4-Mb serial F-RAMs feature a 40-MHz SPI, a 2-to-3.6-V operating voltage range and are available in industry-standard, RoHS-compliant package options. All Cypress F-RAMs provide 100 trillion read/write cycle endurance with 10-year data retention at 85˚C and 151 years at 65˚C.Cypress 4Mb Serial F-RAM

Cypress F-RAMs are ideal solutions for applications requiring continuous and frequent high-speed reading and writing of data with absolute data security. The 4-Mb serial F-RAM family addresses mission-critical applications such as industrial controls and automation, industrial metering, multifunction printers, test and measurement equipment, and medical wearables.

The 4-Mb serial F-RAMs are currently sampling in industry-standard 8EIAJ and 8TDFN packages. Production expected in the fourth quarter of 2015.

Source: Cypress Semiconductor

 


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F-RAM Expands the Density Range of Energy-Efficient Nonvolatile R…

by Circuit Cellar Staff time to read: 1 min