The AS4C4M16D1-5TIN, the AS4C8M16D1-5TIN, the AS4C16M16D1-5TIN, and the AS4C32M16D1-5TIN are high-speed CMOS double data rate synchronous DRAMs (DDR SDRAMs). The devices feature densities of 64 MB (AS4C4M16D1-5TIN), 128 MB (AS4C8M16D1-5TIN), 256 MB (AS4C16M16D1-5TIN), and 512 MB (AS4C32M16D1-5TIN) with a –40°C to 85°C industrial temperature range.
The DDR SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for industrial, medical, communications, and telecommunications products requiring high memory bandwidth. The devices are well-suited for high performance in PC applications. Internally configured as four banks of 1M, 2M, 4M, or 8M word × 16 bits with a synchronous interface, the DDR SDRAMs operate from a single 2.5-V (± 0.2 V) power supply and are lead- and halogen-free.
The AS4C4M16D1-5TIN, the AS4C8M16D1-5TIN, the AS4C16M16D1-5TIN, and the AS4C32M16D1-5TIN feature a 200-MHz clock rate and are available in a 66-pin TSOP II package with a 0.65-mm pin pitch. The 128-, 256-, and 512-MB devices are also available in a TFBGA package.
The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. A programmable mode register enables the system to choose a suitable mode for maximum performance.
Pricing for the AS4C4M16D1-5TIN, the AS4C8M16D1-5TIN, the AS4C16M16D1-5TIN, and the AS4C32M16D1-5TIN starts at $0.90 per piece.
Alliance Memory, Inc.