700-V CoolMOS P7 Family for Flyback-Based, Low-Power SMPS Applications

Infineon Technologies recently launched the 700-V CoolMOS P7 family for quasi-resonant flyback topologies. Offering performance advantages over superjunction technologies, the MOSFETs are well suited for mobile device chargers and notebook adapters. They also support fast switching and high power density designs for TV adapters, lighting, and moreInfineon CoolMOS_P7

Features and benefits include:

  • Finely graduated RDS(on) x Eoss; lower Qg, Eon and Eoff
  • High switching frequency capable
  • Integrated Zener diode
  • Large variety of packages
  • Low losses
  • Additional 50 V of blocking voltage compared to C6 technology
  • Meets EMI requirements
  • High ESB ruggedness
  • Lower case temperatures

The 700 V CoolMOS P7 family is available with the most relevant RDS(on) package combinations including 360 mΩ up to 1400 mΩ in IPAK SL, DPAK, and TO-220FP.

Source: Infineon Technologies

New Radiation-Hardened MOSFETs for Space Applications

IR HiRel (an Infineon Technologies company) recently launched its first radiation-hardened MOSFETs based on the proprietary N-channel R9 technology platform. Offering size, weight, and power improvements over previous technologies, the 100-V, 35-A MOSFETs are ideally suited to mission-critical applications requiring an operating life up to and beyond 15 years. Target applications include space-grade DC-DC converters, intermediate bus converters, motor controllers, and high-speed switching designs.Infineon - RAD-hard-MOSFET

The IRHNJ9A7130’s and IRHNJ9A3130’s features, benefits, and specs:

  • Characterized for total ionizing dose (TID) immunity to radiation of 100 krads and 300 krads, respectively.
  • An R DS(on) of 25 mΩ (typical) is 33% lower than the previous device generation.
  • Provide increased power density and reduced power losses in switching applications
  • Improved Single Event Effect (SEE) immunity and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90 MeV/(mg/cm²); at least 10 percent higher than previous generations.
  • Both of the new devices are packaged in a hermetically sealed, lightweight, surface-mount ceramic package (SMD-0.5) measuring just 10.28 mm × 7.64 mm × 3.12 mm.
  • Available in bare die form.

Source: Infineon Technologies

800-V CoolMOS P7 Series for Low-Power SMPS Applications

Infineon Technologies recently introduced its 800-V CoolMOS P7 series. Based on the superjunction technology, the product family is well suited for low-power SMPS applications, such a s LED lighting, audio, industrial, and auxiliary power.Infineon_CoolMOS

The 800 V CoolMOS P7’s offers up to 0.6% efficiency gain. In addition, an integrated Zener diode reduces ESD-related production yield losses. The easy to drive and design-in MOSFET features an industry leading V (GS)th of 3 V and the smallest V GS(th) variation of only ±0.5 V.

The 800-V CoolMOS P7 MOSFET family will be available in twelve R DS(on) classes and in six packages. You can order products with R DS(on) of 280 mΩ, 450, 1,400, and 4,500 mΩ.

Source: Infineon Technologies

Contactless Security Chip Powers First NFC Payment Ring

NFCRing’s new EMVCo-compliant, wearable payment ring features a Infineon Technologies contactless security chip. Operating like a contactless payment card, the ring enables users to pay for products via an EMVCo contactless-enabled payment terminal. The EMVCo’s member organizations include American Express, Discover, JCB, MasterCard, UnionPay, and Visa.NFC Payment Ring

The Infineon SLE 77CLFX2407P contactless security cryptocontroller chip enabled the ring’s designers to develop a  wearable that doesn’t have a battery. The chip acquires the energy it needs from the electromagnetic field.

The chip’s features and specs:

  • Powerful 16-bit core
  • 90-nm Technology
  • Common criteria EAL 5+(high)
  • EMVCo certified



The ring is available for $52.

Sourece: NFCRing, Inc.

New Highly integrated Hall sensors

Infineon Technologies recently introduced a new family of Hall sensors targeted at cost-effective, compact designs. Available as latch and switch-type devices, the sensors in the TLx496x family have precise switching points, stable operation, and a low power consumption.Infineon TLx496x

The TLx496x Hall sensors consume no more than 1.6 mA. In addition, they have an integrated Hall element, a voltage regulator (to power the Hall element and the active circuits), choppers (ensure that the temperature remains stable), an oscillator, and an output driver.


The TLE496x-xM series is well suited for automotive applications (e.g., power windows and sunroofs, trunk locks, and windshield wipers) with an operating voltage of 3 to 5.5 V. The TLI496x-xM series units function like the TLE496x-xM units, but it is specified for a temperature range of –40° to 125°C and is JESD47 qualified. The TLI496x-xM is used in BLDC motors in e-bikes and fans in PCs and in electric drives in building automation. The TLV496x-xTA/B series was specifically developed for the cost-effective, contactless positioning. Typical applications are BLDC motors in home appliances (e.g., dishwashers), compressors in air-conditioners, and more. Despite the pressure to cut costs, these applications need very precise Hall latches or Hall switches (unipolar/bipolar) for temperatures ranging from –40 °C to 125 °C. The TLV496x-xTA/B versions have a power consumption of 1.6 mA and an ESD protection up to 4 kVH Human Body Model (HBM). The output has overcurrent protection and automatically switches off at high temperatures.

The Hall sensors of all three series are available in high volume. Development support includes online simulation tools and application manuals.


Source: Infineon Technologies

79-GHz CMOS Radar Sensor Chips for Automotive Applications

Infineon Technologies recently announced at the Imec Technology Forum in Brussels (ITF Brussels 2016) it is cooperating with Imec to develop integrated CMOS-based, 79-GHz sensor chips for automotive radar applications. According to the announcement, Infineon and Imec expect functional samples to be available in Q3 2016. A complete radar system demonstrator is slated for early 2017.

There are usually up to three radar systems built into vehicles equipped with driver assistance functions. In the future, fully automated cars will be equipped with up to 10 radar systems and 10 additional sensor systems using camera or lidar technologies.

Source: Infineon Technologies

TRENCHSTOP Performance IGBT Enables Energy Efficiency

Infineon Technologies recently launched the 600-V TRENCHSTOP Performance IGBT to deliver high energy efficiency and reliability for a variety of applications, such as air conditioning, solar PV inverters, drives, and uninterruptible power supplies (UPS). Based on Infineon’s TRENCHSTOP technology, the new IGBT is optimized for hard switching topologies working at frequencies of up to 30 kHz. The new TRENCHSTOP Performance IGBT series combines the best trade-off between conduction and switch-off energy losses with outstanding robustness, 5-µs short circuit capability, and excellent electromagnetic interference (EMI) behavior.Infineon TRENCHSTOP

The 600-V TRENCHSTOP Performance is an attractive alternative to the predecessor TRENCHSTOP IGBT from Infineon as well as to competing products. In a plug-and-play replacement the new TRENCHSTOP Performance IGBT yields reduced losses of 7% at switching frequency of 8 kHz. An unmatched 11% lower total loss is delivered for switching frequency of 15 kHz. Making use of the same packages, redesigns for higher efficiency and competitive cost can be realized easily, fast and with low efforts. The 600-V TRENCHSTOP Performance IGBT contributes to more energy-efficient power consumption, higher reliability, and longer operational lifetime of the application. For end consumers this means lower electricity bills, sustainability, and environmental protection.

The TRENCHSTOP Performance IGBT is available now.

Source: Infineon Technologies

Infineon Embedded Security Selected for Lenovo ThinkPad

Lenovo will use Infineon Technologies OPTIGA Trusted Platform Module (TPM) chips in the new ThinkPad notebooks in an effort to combat security risks. The OPTIGA TPM SLB 9670 chip is designed to increase the data security of laptops and tablet PCs. Sensitive data (e.g., security keys and passwords) can be stored in the TPM chip separately from the main processor.  Infineon - OPTIGA

According to Infineon, the company also supplies embedded security solutions other companies, including Microsoft, Hewlett Packard, and Samsung. The OPTIGA product family provides different levels of security for products as diverse as multiple-server IT infrastructures and MP3 players.

Source: Infineon

Compact NFC Security Module for Smart Wearables

Infineon Technologies is collaborating with Beijing-based Mobile Payment Solutions Co. Ltd. (MPS) on a new plug-and-play NFC security module. The smallest module in the series measures only 4 mm × 4 mm, making it a good fit for wearable electronics.Infineon_NFC

The MPS Boosted NFC security module series is well suited for wearable applications. At the core of the module is Infineon’s Boosted NFC Secure Element, which eliminates the need for the separate NFC controller that’s typically required with conventional solutions to utilize card emulation functionality in a device. The NFC antenna and antenna-matching components are included in the package, which reduces the PCB footprint by more than 75% percent (when you are using the smallest module of the series).

Running on a standard Java security card operating system, the Boosted NFC security module allows for the flexible loading of multiple Java-based applications (applets) on smart devices. While the Boosted NFC security module is an excellent option for new product designs, you could easily integrate it into existing designs to extend functionality to include secure payment.

The NFC security module’s main component is Infineon’s SLE78 security chip, which combines highest security performance with a storage capacity of more than 1 MB. This provides sufficient memory to securely store user credentials and run multiple applications, enabling a single device to replace a variety of cards (e.g., payment cards and public transportation tickets).

Source: Infineon Technologies

Simplified, Cost-Effective EtherCAT Implemenation with XMC4300 Microcontrollers

The Infineon Technologies XMC4300 microcontroller series simplifies EtherCAT implementation complexity and cost. Developed for cost-sensitive industrial applications, the XMC4300 is well suited for a variety of applications, such as factory automation, industrial motor control, and robotics.Infineon EtherCAT

Like Intineon’s XMC4800 series, the XMC4300 features an integrated EtherCAT node on an ARM Cortex-M processor with on-chip flash and analog/mixed signal capabilities. Neither the XMC4300 nor XMC4800 require oadditional components such as dedicated EtherCAT ASIC, external memory, or a quartz clock generator to start the EtherCAT slave controller. An integrated PLL supplies the EtherCAT IP with the necessary 25-MHz clock. Code executes from the Cortex-M4 processor at 144 MHz from the integrated RAM or flash memory.

You can use the XMC4300 and XMC4800 in mixed networks with CAN and EtherCAT because they allow a gateway from CAN to EtherCAT via through DMA transfers. In addition to 256 KB of flash memory and 128 KB of RAM memory, the XMC4300 features two CAN nodes with up to 64 message objects to be organized into send/receive FIFO. In addition, the XMC4300 series is certified for an ambient temperature of up to 125°C.

The two devices in the XMC4300 series vary in temperature range, with up to 85°C and up to 125°C, respectively. Offered in an LQFP-100 package, they are pin- and code-compatible with devices in the XMC4800 series.

Infineon offers a development board, the XMC4300 Relax EtherCAT Kit, and software development tools for immediate EtherCAT node setup. The XMC4300 Relax EtherCAT Kit is equipped with an XMC4300 and an on-board debugger, EtherCAT, CAN node, and USB. For software development, you can use the DAVE development environment with libraries for low-level drives and apps free of charge. For EtherCAT, DAVE uses Slave Stack Code (SSC) from Beckhoff. In addition to the free development environment, third-party manufacturers offer commercial EtherCAT slave stacks.

Source: Infineon Technologies

OPTIGA Trusted Platform Modules Enhance Security for Connected Devices

Microsoft currently uses Infineon Technologies OPTIGA Trusted Platform Modules (TPMs) in its newest personal computing devices, including the Surface Pro 4 tablet and the Surface Book. The dedicated security chips store sensitive data, including keys, certificates, and passwords and keeps them separated from the main processor, which further secures the system from unauthorized access, manipulation, and data theft. For example, the Microsoft BitLocker Drive Encryption application’s key and password are stored in the TPM.Infineon-OPTIGA

Microsoft’s personal computing devices rely on the OPTIGA TPM SLB 9665, which is the first certified security controller based on TPM 2.0. This standard was defined by the Trusted Computing Group (TCG).

Source: Infineon Technologies

µHVIC Family with New Single-Channel Low-Side Drivers

Infineon Technologies expanded its µHVIC family of integrated circuits for high and low voltage. The new IR44252L, IR44272L, and IR44273L single channel low-side drivers enable highly effective design solutions. Using Infineon’s high-voltage junction isolation (HVJI) technology, the small driver ICs are complementary with other µHVIC parts and serve as a viable solution for flexible PCB layouts across a variety platforms.Infineon - IOR_SOT23-5L

In addition to the tiny SOT23 packages, the drivers feature a wide VCC range of 5  to 20 V, an enable input (IR44272L), and dual output pins (IR44252L and IR44273L). The typical source current and sink current of the IR44252L is specified with 300 and 550 mA, 1.7 A/1.5 A for the IR44272L and IR44273L,respectively. The new low-side drivers offer VCC Under Voltage Lock Out (UVLO) protection and fast switching. Typical turn-on and turn-off propagation delay is 50 ns and typical turn-on rise time and turn-off fall time down to 10 ns (IR44273L and IR44272L). In addition, the new devices are 3.3-V logic compatible and provide CMOS Schmitt-triggered inputs.

The seven-device driver IC family offers easy-to-implement building blocks for frequently used circuit elements. Apart from the new low-side drivers, the family includes the IRS25752L, IRS20752L, and IRS10752L (600 V, 200 V and 100 V) single channel high-side drivers and the IRS25751L high-voltage start-up IC (480 V). µHVIC family production samples are now available.

Source: Infineon Technologies

GaN Devices for Mobile Base Station Transmitters

Infineon Technologies recently introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors. The devices enable mobile base station manufacturers to build smaller, more powerful and more flexible transmitters. With higher efficiency, improved power density, and more bandwidth than currently used RF power transistors, the new devices improve the economics of building infrastructure to support today’s cellular networks. Additionally, they will enable the transition to 5G technology with higher data volumes and enhanced user-experience.Infineon-gan-group

The new RF power transistors leverage the performance of GaN technology to achieve ten percent higher efficiency and five times the power density of the LDMOS transistors commonly used today. This translates to smaller footprints and power requirements for the power amplifiers (PA) of base station transmitters in use today, which operate in either the 1.8-2.2 GHz or 2.3-2.7 GHz frequency range. Future GaN on SiC devices will also support 5G cellular bandsup to the 6 GHz frequency range. This roadmap allows Infineon to build on its long-standing expertise and state-of-the-art production technologies for RF transistor technology.

Design flexibility and support for the next-generation of 4G technology are additional benefits of GaN devices for RF power applications. The new devices have twice the RF bandwidth of LDMOS, so that one PA can support multiple operating frequencies. They also have increased instantaneous bandwidth available for transmitters, which lets a carrier offer higher dates using the data aggregation technique specified for 4.5G cellular networks.

Source: Infineon Technologies

High-Accuracy, 3-D Magnetic Sensor

Infineon Technologies recently announced the availability of the TLV493D-A1B6, a 3-D magnetic sensor that features highly accurate three-dimensional sensing with extremely low power consumption in a small six-pin TSOP package. Magnetic field detection in x, y, and z directions enables the sensor to measure 3-D, linear, and rotation movements. The implemented digital I²C interface enables fast and bidirectional communication between the sensor and microcontroller.3D-Magnetic-Sensor_TSOP6_Infineon

The TLV493D-A1B6 is intended for consumer and industrial applications that require accurate 3-D measurements or angular measurements or low power consumption, such as joysticks, electric meters where the 3-D magnetic sensor helps to protect against tampering, and more. With its contactless position sensing and high temperature stability of magnetic threshold, the TLV493D-A1B6 enables these systems to become smaller, more accurate, and robust.

The 3-D magnetic sensor TLV493D-A1B6 enables smaller and more energy efficient e-meter systems. Today, up to three magnetic sensors—one for each dimension of external magnetic field—are needed to measure tampering attempts with large magnets. In future, the 3-D magnetic sensor TLV493D-A1B6 will replace all 3-D sensors thus making e-meters smaller and more energy efficient.

The 3-D sensor TLV493D-A1B6 detects all three dimensions of a magnetic field. Using lateral hall plates for the z direction and vertical Hall plates for the x and y direction of the magnetic field, the sensor can be used in a large magnetic field range of ±150 mT for all three dimensions. This allows measuring and covering a long magnet movement. The large operation scale also makes the magnet circuit design easy, robust and flexible.

The TLV493D-A1B6 provides 12-bit data resolution for each measurement direction. This allows a high data resolution of 0.098 mT per bit (LSB) so that even the smallest magnet movements can be measured.

One of the main development goals for the TLV493D-A1B6 sensor was low power consumption. In Power Down mode, the sensor only requires 7-nA supply current. To perform magnetic measurements, the sensor can be set in one of five different power modes. In Ultra Low Power Mode, for example, the sensor performs a magnetic measurement every 100 ms (10 Hz) resulting in a current consumption of 10 µA. The time between measurement cycles can be set flexibly allowing system specific solutions. Using the sensor with continuous measurements, the maximum power consumption is only 3.7 mA. Also, the power modes can be changed during operation.

The TLV493D-A1B6 uses a standard I²C digital protocol to communicate with external microcontrollers. It is possible to operate the sensors in a bus mode to eliminate additional wiring cost and efforts.

Targeting industrial and consumer applications, TLV493D-A1B6 can be operated on supply voltages between 2.7 and 3.5 V and in a temperature range from –40°C to 125°C. The product is qualified according to industry standard JESD47.

For a fast design-in process, Infineon offers the “3D Magnetic 2Go” evaluation board. In combination with the free 3-D sensor software, first magnetic measurements are attainable within minutes. The evaluation board applies the Infineon 32-bit XMC1100 micrcontroller that uses the ARM Cortex-M0 processor.

The “3D Magnetic 2Go” is currently available (www.ehitex.com). Engineering samples of the TLV493D-A1B6 designed for consumer and industrial applications will be available as of July 2015. Volume production is expected to start in January 2016.

Source: Infineon Technologies

New IGBTs for Switching Frequencies from 50 Hz to 20 kHz

Infineon Technologies recently introduced a new class of low saturation voltage V CE(sat) IGBTs specifically optimized for low switching frequencies ranging from 50 Hz to 20 kHz. These can typically be found in applications such as uninterruptible power supply (UPS) as well as in inverters for photovoltaic and welding systems. The new L5 family is based on the TRENCHSTOP 5 thin wafer technology, with the intrinsically low conduction losses having been reduced further with additional optimization of the carrier profile.Infineon TO-247-4-L5

With a typical V CE(sat) value at 25°C of 1.05 V, new levels of efficiency can be reached—up to 0.1% efficiency improvement in a NPC 1 topology or up to 0.3% efficiency improvement in a NPC 2 topology when replacing predecessor TRENCHSTOP IGBTs with the L5 family. Coupled with the positive temperature coefficient of V CE(sat), high efficiency is maintained plus paralleling straightforward—an industry benchmark for IGBTs switching below the 20-kHz frequency. The TRENCHSTOP 5 technology base used for the new L5 family not only delivers unmatched low conduction losses, but total switching losses are as low as 1.6 mJ at 25°C. For these reasons the use of the newly introduced low V CE(sat) IGBT leads to higher efficiency, improved reliability and smaller dimensions of the systems in low switching frequency applications.

The new L5 IGBT family is released in a first wave using the industry standard TO-247 three-pin package. Additionally, for applications requiring extended efficiency enhancement, Infineon also offers the L5 in the innovative TO-247 4pin Kelvin-Emitter package. When compared to the standard TO-247 3pin package, the TO-247 4pin package provides a further 20% reduction in switching losses. Thus the L5 in combination with the TO-247 4pin package provides the ultimate lowest conduction and switching losses and maintains Infineon’s leading position in offering the High Power market highly innovative and differentiated products.

The new low V CE(sat) L5 family is available in 30A and 75A current classes as single IGBT and co-packed with Infineon’s ultrafast Rapid 1 and Rapid 2 silicon diodes. The TO-247 4pin Kelvin-Emitter package will be available in 75A current class.

Source: Infineon Technologies