600-V GaN FET Power Stages Support up to 10 kW

Texas Instruments (TI) has announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications.
TI’s family of GaN FET devices provides a alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies.

Dubbed the LMG3410R050, LMG3410R070 and LMG3411R070 TI’s integrated GaN power stage doubles power density and reduces losses by 80 percent compared to silicon metal-oxide semiconductor field-effect transistors (MOSFETs). Each device is capable of fast, 1-MHz switching frequencies and slew rates of up to 100 V/ns. The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing. Additionally, each device provides integrated thermal and high-speed, 100-ns overcurrent protection against shoot-through and short-circuit conditions.

Devices for every power level: Each device in the portfolio offers a GaN FET, driver and protection features at 50 mΩ or 70 mΩ to provide a single-chip solution for applications ranging from sub-100 W to 10 kW.

These devices are available now in the TI store in 8-mm-by-8-mm split-pad, quad flat no-lead (QFN) packaging. The LMG3410R050, LMG3410R070 and LMG3411R070 are priced at US$18.69, $16.45 and $16.45, respectively, in 1,000-unit quantities.

Texas Instruments | www.ti.com

Dialog Semiconductor Enters Gallium Nitride (GaN) Market

Dialog Semiconductor recently announced the upcoming availability of the DA8801, which is its first gallium nitride (GaN) power IC device, using Taiwan Semiconductor Manufacturing Corporation’s (TSMC) 650-V GaN-on-Silicon process technology. The DA8801 should initially find traction in the the fast-charging smartphone and computing adapter segment.

Along with Dialog’s digital Rapid Charge power conversion controllers, the DA8801 will enable more efficient, smaller, and higher power density adapters compared to FET-based options. The DA8801’s half-bridge integrates building blocks (e.g., gate drives and level shifting circuits) with 650-V power switches. Allows an up to 50% size reduction in power electronics

The DA8801 will be available in sample quantities in Q4 2016.

Source: Dialog Semiconductor

Integrated High-Voltage GaN FET and Driver Solution

Texas Instruments recently announced the availability of 600-V gallium nitride (GaN) 70-mΩ field-effect transistor (FET) power-stage engineering samples. The 12-A LMG3410 power stage coupled with TI’s analog and digital power-conversion controllers enables you to create smaller, higher-performing designs compared to silicon FET-based solutions. These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing, and renewable energy applications.TI LMG3410

The LMG3410’s features and specifications:

  • Integrated driver and zero reverse-recovery current
  • Integrates built-in intelligence for temperature, current, and undervoltage lockout (UVLO) fault protection
  • Includes GaN FETs
  • Double the power density
  • Reduced packaging parasitic inductance
  • Enables new topologies

To support designers who are taking advantage of GaN technology in their power designs, TI also launched new products to expand its GaN ecosystem. The LMG5200POLEVM-10, a 48-V to 1-V point-of-load (POL) evaluation module, will include the new TPS53632G GaN FET controller, paired with the 80-V LMG5200 GaN FET power stage. The solution allows for efficiency as high as 92% in industrial, telecom, and datacom applications.


TI will offer a development kit that includes a half-bridge daughtercard and four LMG3410 IC samples. A second kit will include a system-level evaluation motherboard. When used together, the two kits enable immediate bench testing and design. The two development kits are available for $299 and $199, respectively.

Source: Texas Instruments

GaN Devices for Mobile Base Station Transmitters

Infineon Technologies recently introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors. The devices enable mobile base station manufacturers to build smaller, more powerful and more flexible transmitters. With higher efficiency, improved power density, and more bandwidth than currently used RF power transistors, the new devices improve the economics of building infrastructure to support today’s cellular networks. Additionally, they will enable the transition to 5G technology with higher data volumes and enhanced user-experience.Infineon-gan-group

The new RF power transistors leverage the performance of GaN technology to achieve ten percent higher efficiency and five times the power density of the LDMOS transistors commonly used today. This translates to smaller footprints and power requirements for the power amplifiers (PA) of base station transmitters in use today, which operate in either the 1.8-2.2 GHz or 2.3-2.7 GHz frequency range. Future GaN on SiC devices will also support 5G cellular bandsup to the 6 GHz frequency range. This roadmap allows Infineon to build on its long-standing expertise and state-of-the-art production technologies for RF transistor technology.

Design flexibility and support for the next-generation of 4G technology are additional benefits of GaN devices for RF power applications. The new devices have twice the RF bandwidth of LDMOS, so that one PA can support multiple operating frequencies. They also have increased instantaneous bandwidth available for transmitters, which lets a carrier offer higher dates using the data aggregation technique specified for 4.5G cellular networks.

Source: Infineon Technologies

High Electron Mobility Transistors

gold backgroundThe TPH3002LD and the TPH3002LS are 600-V Gallium nitride (GaN)-based, low-profile power quad flat no-lead (PQFN) high electron mobility transistors (HEMTs). The HEMTs utilize Transphorm’s patented, high-performance EZ-GaNTM technology, which combines low switching and conduction losses, reducing the overall system energy dissipation up to 50%.

The TPH3002PD and TPH3002PS HEMTs are designed for use in smaller, lower-power applications (e.g., adapters and all-in-one computer power supplies). The HEMTs feature a Kelvin connection to isolate the gate circuit from the high-current output circuit to further reduce electromagnetic interference (EMI) and high-frequency switching capabilities.
Evaluation boards are available with the devices.

Contact Transphorm for pricing.

Transphorm, Inc.