Dialog Semiconductor recently announced the upcoming availability of the DA8801, which is its first gallium nitride (GaN) power IC device, using Taiwan Semiconductor Manufacturing Corporation’s (TSMC) 650-V GaN-on-Silicon process technology. The DA8801 should initially find traction in the the fast-charging smartphone and computing adapter segment.
Along with Dialog’s digital Rapid Charge power conversion controllers, the DA8801 will enable more efficient, smaller, and higher power density adapters compared to FET-based options. The DA8801’s half-bridge integrates building blocks (e.g., gate drives and level shifting circuits) with 650-V power switches. Allows an up to 50% size reduction in power electronics
The DA8801 will be available in sample quantities in Q4 2016.
The TPH3002LD and the TPH3002LS are 600-V Gallium nitride (GaN)-based, low-profile power quad flat no-lead (PQFN) high electron mobility transistors (HEMTs). The HEMTs utilize Transphorm’s patented, high-performance EZ-GaNTM technology, which combines low switching and conduction losses, reducing the overall system energy dissipation up to 50%.
The TPH3002PD and TPH3002PS HEMTs are designed for use in smaller, lower-power applications (e.g., adapters and all-in-one computer power supplies). The HEMTs feature a Kelvin connection to isolate the gate circuit from the high-current output circuit to further reduce electromagnetic interference (EMI) and high-frequency switching capabilities.
Evaluation boards are available with the devices.