Dialog Semiconductor Enters Gallium Nitride (GaN) Market

Dialog Semiconductor recently announced the upcoming availability of the DA8801, which is its first gallium nitride (GaN) power IC device, using Taiwan Semiconductor Manufacturing Corporation’s (TSMC) 650-V GaN-on-Silicon process technology. The DA8801 should initially find traction in the the fast-charging smartphone and computing adapter segment.

Along with Dialog’s digital Rapid Charge power conversion controllers, the DA8801 will enable more efficient, smaller, and higher power density adapters compared to FET-based options. The DA8801’s half-bridge integrates building blocks (e.g., gate drives and level shifting circuits) with 650-V power switches. Allows an up to 50% size reduction in power electronics

The DA8801 will be available in sample quantities in Q4 2016.

Source: Dialog Semiconductor

High Electron Mobility Transistors

gold backgroundThe TPH3002LD and the TPH3002LS are 600-V Gallium nitride (GaN)-based, low-profile power quad flat no-lead (PQFN) high electron mobility transistors (HEMTs). The HEMTs utilize Transphorm’s patented, high-performance EZ-GaNTM technology, which combines low switching and conduction losses, reducing the overall system energy dissipation up to 50%.

The TPH3002PD and TPH3002PS HEMTs are designed for use in smaller, lower-power applications (e.g., adapters and all-in-one computer power supplies). The HEMTs feature a Kelvin connection to isolate the gate circuit from the high-current output circuit to further reduce electromagnetic interference (EMI) and high-frequency switching capabilities.
Evaluation boards are available with the devices.

Contact Transphorm for pricing.

Transphorm, Inc.
www.transphormusa.com