BeRex recently began shipping the BCF-series family of GaAs metal–semiconductor field effect transistor (MESFET) chips. According a press release, the family “addresses the need for low phase noise with high gain and power in applications such as single and multistage amplifiers, oscillators, synthesizers, etc. ranging in frequency from DC to 26.5 GHz.”You can use the MESFET chips for both broadband and narrow-band applications from DC to 26.5 GHz. A typical application requires a high level of Output Third-Order Intercept Point (OIP3) linearity and a low phase noise that cannot be easily achieved with other technologies, BeRex announced.
Seven devices comprise tje BCF-series family. Each device is built utilizing a 0.25-µm gate length and with a gate width of 200, 300, 400, 600, 800, 1,200, or 2,400 µm, depending on gain and power requirements (up to 1 W for the largest 2,400-µm device).